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	Distributed feedback type semiconductor laser
	YAMAGUCHI MASAYUKI
	1985-03-30
著作权人	NIPPON DENKI KK
专利号	JP1985055686A
国家	日本
文献子类	发明申请
其他题名	Distributed feedback type semiconductor laser
英文摘要	PURPOSE:To make it not always necessary to selectively form electrodes so as not to generate electric short-circuit at the time of fusing onto a heat sink by a method wherein an oblique plane which one end surface in the direction of the resonator forms by cross-passage through an active layer and a waveguide layer is covered with an insulation film. CONSTITUTION:A grating 18 of a period of 4,600Angstrom is formed on an N type InP substrate 11, a clad layer. The waveguide layer 12 made of N type InGaAsP having a thickness of 0.2mum, higher refractive index than InP, and a forbidden band width of 0.95eV, the non-doped InGaAsP active layer 13 having a thickness of 0.1mum and a forbidden band width of 0.8eV, a clad layer 14 having a thickness of 2mum and made of P type InP, and a contact layer 15 made of P type InGaAsP having a thickness of 1mum and a forbidden band width of 03eV are successively crystal-grown thereon. Then the insulation film 16 made of SiO2 5,000Angstrom thick is formed on the plane 19 etched obliquely with Br+CH3OH (1: 100), and an electrode metal 17 made of three layers e.g. of Ti/Pt/Au is formed over the entire surface; accordingly a DFB laser is obtained.
公开日期	1985-03-30
申请日期	1983-09-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74560]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	YAMAGUCHI MASAYUKI. Distributed feedback type semiconductor laser. JP1985055686A. 1985-03-30.

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