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	Semiconductor laser device
	SUGINO TAKASHI; YOSHIKAWA AKIO; HIROSE MASANORI; YAMAMOTO ATSUYA
	1988-10-21
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1988254785A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To make it possible to perform longitudinal-mode oscillation and to control noises, by using a high resistance material for a part of a current injecting stripe part. CONSTITUTION:On an N-GaAs substrate 11, an N-Ga0.55Al0.45As clad layer 12, a non-doped Ga0.85Al0.15As active layer 13, a P-Ga0.55Al0.45As clad layer 14, a P-GaAs layer 15 and a P-high-resistance layer 20 are continuously grown. The high resistance layer 20 and the P-GaAs layer 15 are made to remain in a stripe shape, and the other parts are etched away. The P-GaAlAs clad layer 14 is etched, and a ridge 18 is formed. The thickness of the P-GaAlAs clad layer is made to be 0.3mum on both sides of the ridge 18. Then, the high resistance layer 20 is made to remain for the width of 50mum in the direction of the stripe, and the other part is removed. Thereafter, TiPtAu 16 is evaporated on the surface. The contact resistance becomes high on the P-GaAlAs clad layer 14. A current is injected only into a part directly beneath the ridge part 18. Longitudinal-mode oscillation is performed in the semiconductor laser formed in this way. The values of noises as low as -140dB or less are obtained.
公开日期	1988-10-21
申请日期	1987-04-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74548]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	SUGINO TAKASHI,YOSHIKAWA AKIO,HIROSE MASANORI,et al. Semiconductor laser device. JP1988254785A. 1988-10-21.

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