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	Manufacture of semiconductor laser
	IMANAKA KOICHI
	1987-11-18
著作权人	オムロン株式会社
专利号	JP1987265787A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To produce an inner current stricture type semiconductor laser by a method wherein a striped groove or oblique lined part is processed on a P-type GaAs substrate in the (100) surface direction to grow Si-doped GaAs or Al GaAs by molecular beam epitaxial growth on the groove. CONSTITUTION:An Si, S2 groove is made on a P-type GaAs substrate 7 in the (100) surface direction by etching process. Next, an Si-doped Al GaAs layers 6, a Be-doped Al GaAs layer 5, an Al GaAs base active layer 4, an Si-doped Al GaAs layer 3 and an N-type GaAs layer 2 are successively grown and finally electrodes 1 and 8 are provided by molecular beam epitaxial growth (MBE). The layer 6 becomes P type inside the groove formed by etching process while becoming N type on the flat parts outside the groove resultantly the interface between the layer 6 and 5 becomes an inverse biased current stopping layer in the flat parts to flow current inside the groove only (region displayed by oblique lines in the P type part). Through these procedures, an inner current stricture type semiconductor laser is produced by one time crystal growth by properly selecting dopant.
公开日期	1987-11-18
申请日期	1986-05-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74373]
专题	半导体激光器专利数据库
作者单位	オムロン株式会社
推荐引用方式 GB/T 7714	IMANAKA KOICHI. Manufacture of semiconductor laser. JP1987265787A. 1987-11-18.

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