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	Semiconductor laser element
	YANO MORICHIKA
	1984-11-30
著作权人	SHARP KK
专利号	JP1984211293A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To enable to stably obtain lateral basic mode oscillation without influence of injected current by providing a striped waveguide region formed out of a current passage in parallel with the vicinity of a laser oscillation exciting region correspoding to the striped current passage. CONSTITUTION:V-shaped groove 9a is formed in coincidence with the center of a stripe groove 7 from the upper surface of a current blocking layer 8 as a striped groove forming a light waveguide region 3. A V-shaped groove 9b is formed in parallel with the position isolated from the groove 9a to open the current passage, from which the layer 8 is removed. An exciting region 2 is formed directly above the groove 9b. A pair of V-shaped grooves 9a, 9b are formed on a substrate 6 corresponding to the groove 7 formed thereon. A P type GaAlGa clad layer 10, N type (or P type) GaAlAs active layer 11, N type GaAlAs clad layer 12, an N type GaAs cap layer 13 are sequentially accumulated on the layer 8 by a liquid phase epitaxial growth method to form a double hetero junction structure. Then, a P type electrode, is formed on the substrate 56, an N type electrode is formed on the layer 13, and cleaved to form a Fabry- Perot resonator.
公开日期	1984-11-30
申请日期	1983-05-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74354]
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	YANO MORICHIKA. Semiconductor laser element. JP1984211293A. 1984-11-30.

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