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	Semiconductor laser
	SHIBUYA TAKAO; ITO KUNIO; SHIMIZU YUICHI
	1987-04-21
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1987086785A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To improve reliability in high temperature operation by making clad layers contain impurity element which has a deep level not contributing to electrical conduction. CONSTITUTION:Impurity element which has a deep level not contributing to electrical conduction is contained in a clad layer. For instance, an N-type GaAs current blocking layer 2, the Zn doped P-type Al0.5Ga0.5As 1st clad layer 3, a nondoped Al0.1Ga0.9As active layer 4, the Te doped N-type Al0.5Ga0.5As 2nd clad layer 5 and a Te doped N-type GaAs contact layer 6 are formed on a P-type GaAs substrate Impurity element Cu, which does not contribute to electrical conduction, is contained in the 1st and 2nd cladding layers 3 and 5 with concentration of 2X10cm. With this constitution, multiplication of crystal defects growth in the semiconductor laser is suppressed by the impurity element and deterioration of the semiconductor laser can be avoided so that, even in the operation at high temperature, high reliability can be obtained.
公开日期	1987-04-21
申请日期	1985-10-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74341]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	SHIBUYA TAKAO,ITO KUNIO,SHIMIZU YUICHI. Semiconductor laser. JP1987086785A. 1987-04-21.

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