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	Semiconductor laser device
	SHIMA AKIHIRO
	1989-05-22
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1989129485A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To form carrier density distribution in an active layer in a sharp unimodal distribution, and to elevate the kink generating level of current-optical output characteristics by shaping a low carrier concentration layer having the same conductivity type as that of a substrate and concentration lower than a lower clad layer between the substrate and a current block layer and positioning the bottom of a trench for constricting currents into the low carrier concentration layer. CONSTITUTION:A buffer layer 2 having carrier concentration smaller than a lower clad layer 4 is inserted between a substrate 1 and a current block layer. 3, and the bottom of a V trench 8 is positioned into the buffer layer 2. The buffer layer 2 has a slightly high resistance value by low carrier concentration, and currents preferentially intend to flow through the central section of the V trench 8. Carrier density distribution in an active layer 5 on the V trench 8 is also formed in sharp unimodal distribution high at the central section, and spatial hole burning is difficult to be generated even when an optical output is increased, thus generating no kink up to a high optical output.
公开日期	1989-05-22
申请日期	1987-11-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74339]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	SHIMA AKIHIRO. Semiconductor laser device. JP1989129485A. 1989-05-22.

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