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	Semiconductor laser device
	HORIUCHI SHIGEKI; YAGI TETSUYA; OTA YOICHIRO
	1989-05-16
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1989123492A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain a semiconductor laser device of high performance excellent in frequency response characteristics, by using a semiinsulative GaAs layer as a current blocking layer, blocking the current to parts except a ridge part by the effect of insulating property of the blocking layer itself, and preventing leak current. CONSTITUTION:When a bias voltage is so applied between a P-side electrode 9 and an N-side electrode 8 that the P-side electrode 9 becomes positive, current does not flow in a region where a semiinsulative GaAs current blocking layer interposes between the electrodes 9, 8, and current flows only in a ridge part 7. As the injection current is increased, stimulated emission begins and reaches laser oscillation. In the vertical direction of a device, the laser light is confined, by the effect of difference of real refractive indexes between an active layer 3 and a first and a second clad layers 2, 4. As a result, the leak current caused by the deterioration of a P-N junction is prevented. Thereby obtaining a semiconductor laser device of high performance excellent in frequency response characteristics.
公开日期	1989-05-16
申请日期	1987-11-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74212]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	HORIUCHI SHIGEKI,YAGI TETSUYA,OTA YOICHIRO. Semiconductor laser device. JP1989123492A. 1989-05-16.

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