Semiconductor laser device | |
HORIUCHI SHIGEKI; YAGI TETSUYA; OTA YOICHIRO | |
1989-05-16 | |
著作权人 | MITSUBISHI ELECTRIC CORP |
专利号 | JP1989123492A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To obtain a semiconductor laser device of high performance excellent in frequency response characteristics, by using a semiinsulative GaAs layer as a current blocking layer, blocking the current to parts except a ridge part by the effect of insulating property of the blocking layer itself, and preventing leak current. CONSTITUTION:When a bias voltage is so applied between a P-side electrode 9 and an N-side electrode 8 that the P-side electrode 9 becomes positive, current does not flow in a region where a semiinsulative GaAs current blocking layer interposes between the electrodes 9, 8, and current flows only in a ridge part 7. As the injection current is increased, stimulated emission begins and reaches laser oscillation. In the vertical direction of a device, the laser light is confined, by the effect of difference of real refractive indexes between an active layer 3 and a first and a second clad layers 2, 4. As a result, the leak current caused by the deterioration of a P-N junction is prevented. Thereby obtaining a semiconductor laser device of high performance excellent in frequency response characteristics. |
公开日期 | 1989-05-16 |
申请日期 | 1987-11-06 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/74212] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | HORIUCHI SHIGEKI,YAGI TETSUYA,OTA YOICHIRO. Semiconductor laser device. JP1989123492A. 1989-05-16. |
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