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	Semiconductor laser
	TSUNEKAWA YOSHIFUMI
	1990-03-08
著作权人	SEIKO EPSON CORP
专利号	JP1990068975A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain one having high light output characteristics, low noise characteristics and that oscillates stable basic lateral mode by having a resonator end surface section structured in a phased array, having a mode filter function in the vicinity of the center of the resonator and using a gain waveguide mechanism. CONSTITUTION:In a semiconductor laser having a rib-like light waveguide, the side of which is buried with a II-VI compound semiconductor layer 107, a plurality of rib-like light waveguides in which a current injection width and a rib-like light waveguide width are made almost equal and narrow and a refraction index waveguides structure is made, are placed at an interval that causes light connection alternately at least in the vicinity of one resonator end surface. In the vicinity of the center of the resonator, the width of the rib-like light waveguide is made wider than the width of the rib-like light waveguide having the refraction index waveguide structure and narrower than the space between both sides of the plural rib-like light waveguide having the refraction index waveguide structure present on the resonator end surface and a gain waveguide structure is made. For, example, the side surface of a rib-like light waveguide formed in a shape as shown in the shaded portion is buried with ZnSe 107.
公开日期	1990-03-08
申请日期	1988-09-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74164]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	TSUNEKAWA YOSHIFUMI. Semiconductor laser. JP1990068975A. 1990-03-08.

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