半導体発光装置 | |
田中 一弘; 木原 且裕 | |
1994-11-02 | |
著作权人 | 富士通株式会社 |
专利号 | JP1994087510B2 |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | 半導体発光装置 |
英文摘要 | PURPOSE:To take out an interference light as a frequency variation monitor and facilitate keeping an oscillation frequency by a method wherein an optical waveguide which has a branching region in the middle to provide two light paths with different path lengths is coupled with a semiconductor laser device of a distributed feedback (DFB) type or a distributed reflection (DBR) type. CONSTITUTION:For instance, an N-type InP cladding layer 2 is formed by epitaxial growth on an N-type InP semiconductor substrate 1 and then an InGaAsP guide layer 4 and an InGaAsP active layer 5 are successively grown. The semiconductor substrate of a zone B is selectively etched as deep as the InP cladding layer 2 and an InGaAsP guide layer 8 is grown and further an N-type InP cladding layer 9 is grown on it. In the zone B where the guide layer 8 is grown, an optical waveguide 11a which starts from a DFB laser device 10 and reaches a photodetector 12a with two-way branching part in the middle and an optical waveguide 11b which starts from the DFB laser device 10 and reaches a photodetector 11b are provided. A required light output is taken out from the end surface of the laser device 10 side and, in addition to taking out a light intensity monitor output from the optical waveguide 11b, an interference light produced by the light path length difference is taken out from the optical waveguide 11a as a frequency variation monitor. |
公开日期 | 1994-11-02 |
申请日期 | 1986-08-29 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/74121] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | 富士通株式会社 |
推荐引用方式 GB/T 7714 | 田中 一弘,木原 且裕. 半導体発光装置. JP1994087510B2. 1994-11-02. |
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