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	半導体発光装置
	田中 一弘; 木原 且裕
	1994-11-02
著作权人	富士通株式会社
专利号	JP1994087510B2
国家	日本
文献子类	授权发明
其他题名	半導体発光装置
英文摘要	PURPOSE:To take out an interference light as a frequency variation monitor and facilitate keeping an oscillation frequency by a method wherein an optical waveguide which has a branching region in the middle to provide two light paths with different path lengths is coupled with a semiconductor laser device of a distributed feedback (DFB) type or a distributed reflection (DBR) type. CONSTITUTION:For instance, an N-type InP cladding layer 2 is formed by epitaxial growth on an N-type InP semiconductor substrate 1 and then an InGaAsP guide layer 4 and an InGaAsP active layer 5 are successively grown. The semiconductor substrate of a zone B is selectively etched as deep as the InP cladding layer 2 and an InGaAsP guide layer 8 is grown and further an N-type InP cladding layer 9 is grown on it. In the zone B where the guide layer 8 is grown, an optical waveguide 11a which starts from a DFB laser device 10 and reaches a photodetector 12a with two-way branching part in the middle and an optical waveguide 11b which starts from the DFB laser device 10 and reaches a photodetector 11b are provided. A required light output is taken out from the end surface of the laser device 10 side and, in addition to taking out a light intensity monitor output from the optical waveguide 11b, an interference light produced by the light path length difference is taken out from the optical waveguide 11a as a frequency variation monitor.
公开日期	1994-11-02
申请日期	1986-08-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74121]
专题	半导体激光器专利数据库
作者单位	富士通株式会社
推荐引用方式 GB/T 7714	田中 一弘,木原 且裕. 半導体発光装置. JP1994087510B2. 1994-11-02.

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