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	Semiconductor laser element
	SASAKI KAZUAKI; SUYAMA NAOHIRO; KONDO MASAFUMI; KONDO MASAKI; YAMAMOTO SABURO
	1990-07-23
著作权人	SHARP CORP
专利号	JP1990187088A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To reduce noise intensity of a return light and an astigmatic difference by forming a semiconductor laser region of gain waveguide type to a region excepting an area near an emission edge face and by forming a light confinement section at a region near the emission edge face. CONSTITUTION:A region excepting an area near an emission edge face is provided with a structure of a semiconductor laser element of gain waveguide type. Current constriction is carried out from an upper part of a lamination structure by a high resistance layer 32 which attains to a second clad layer 6. The high resistance layer 33 is formed to a middle of a clad layer 3 in a region near the emission edge face. A multi quantum well active layer 5 is broken by injection of Si ion, and a broken part thereof becomes a light confinement part of a low refraction factor region which has an average composition of a barrier layer and a well layer contituting the active layer 5 and is formed at both outsides of the gain region. According to this constitution, oscillation spectrum is made multi longitudinal mode, and a width of each longitudinal mode is enlarged to reduce a noise intensity of a return light. Furthermore, since refraction factor waveguide based on actual refraction difference is formed at an area near the emission edge face, astigmatic difference can be reduced.
公开日期	1990-07-23
申请日期	1989-01-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74105]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	SASAKI KAZUAKI,SUYAMA NAOHIRO,KONDO MASAFUMI,et al. Semiconductor laser element. JP1990187088A. 1990-07-23.

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