Semiconductor light emitting element | |
HIRAYAMA YUZO | |
1987-09-10 | |
著作权人 | TOSHIBA CORP |
专利号 | JP1987205682A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor light emitting element |
英文摘要 | PURPOSE:To obtain a semiconductor light emitting element characterized by less temperature dependence of a threshold current value, differential quantum efficiency and light emitting efficiency, by providing P- and N-type super lattice layers between an active layer and a P-type clad layer. CONSTITUTION:On an N-type InP substrate 1, an N-type InP buffer layer 2, a non-doped GaInAsP active layer 3, a non-doped InP super lattice layer 4, a P-type InP super lattice layer 5, a non-doped InP layer 6, an N-type InP super lattice layer 7, a non-doped super lattice layer 8, a P-type InP clad layer 9 and a P-type GaInAsP contact layer 10 are sequentially grown by an MOCVD method. By using this wafer, an embedded type laser is formed. Thus the characteristics of the laser device are largely improved by providing the P- and N-type super lattice layers, which alleviate an electric field, and suppressing carrier-overflow currents due to the electric field. |
公开日期 | 1987-09-10 |
申请日期 | 1986-03-06 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/73830] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | TOSHIBA CORP |
推荐引用方式 GB/T 7714 | HIRAYAMA YUZO. Semiconductor light emitting element. JP1987205682A. 1987-09-10. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论