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	Semiconductor light emitting element
	HIRAYAMA YUZO
	1987-09-10
著作权人	TOSHIBA CORP
专利号	JP1987205682A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting element
英文摘要	PURPOSE:To obtain a semiconductor light emitting element characterized by less temperature dependence of a threshold current value, differential quantum efficiency and light emitting efficiency, by providing P- and N-type super lattice layers between an active layer and a P-type clad layer. CONSTITUTION:On an N-type InP substrate 1, an N-type InP buffer layer 2, a non-doped GaInAsP active layer 3, a non-doped InP super lattice layer 4, a P-type InP super lattice layer 5, a non-doped InP layer 6, an N-type InP super lattice layer 7, a non-doped super lattice layer 8, a P-type InP clad layer 9 and a P-type GaInAsP contact layer 10 are sequentially grown by an MOCVD method. By using this wafer, an embedded type laser is formed. Thus the characteristics of the laser device are largely improved by providing the P- and N-type super lattice layers, which alleviate an electric field, and suppressing carrier-overflow currents due to the electric field.
公开日期	1987-09-10
申请日期	1986-03-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/73830]
专题	半导体激光器专利数据库
作者单位	TOSHIBA CORP
推荐引用方式 GB/T 7714	HIRAYAMA YUZO. Semiconductor light emitting element. JP1987205682A. 1987-09-10.

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