Improvements in or relating to injection lasers | |
GEORGE HORACE BROOKE THOMPSON PETER RICHARD SELWAY AND ANTHONY RICHARD GOODWIN | |
1975-09-04 | |
著作权人 | STANDARD TELEPHONES AND CABLES PTY. LIMITED |
专利号 | AU1971033076A1 |
国家 | 澳大利亚 |
文献子类 | 发明申请 |
其他题名 | Improvements in or relating to injection lasers |
英文摘要 | 1,258,360. Luminescent materials and uses thereof. STANDARD TELEPHONES & CABLES Ltd. 25 Sept., 1970, No. 45732/70. Heading C4S. [Also in Division H1] A heterostructure injection laser, Fig. 5, comprises a GraAs p-n junction and a p-type GaAlAs heterostructure layer, and is formed with two adjacent and parallel V-shaped grooves which penetrate through the n-type GaAs and the junction into the p-type GaApAs, the structure having opposed electrodes 50, 52, with the electrode 50 restricted to a ridge 32 of n-type GaAs defined by the grooves so as to confine the injection current to the immediately adjacent portion of the p-n junction. An optical resonator is formed by cleaving the semi-conductor structure orthogonal to the grooves, while the parallel grooves are formed in a V-shape to suppress the generation of transverse radiation. A plurality of lasers are formed 'simultaneously by epitaxially growing a layer of zinc-doped p-type GaAlAs on one major surface of an n-type GaAs substrate, diffusion of the zinc into the substrate forming the p-n junction. The substrate thickness is then reduced by polishing to leave an n-type GaAs layer about 3 microns thick. Spaced pairs of grooves 30, Fig. 3, are formed in the structure by etching and the use of a photoresist, followed by the deposition of an insulating layer of SiO 2 . Windows are then etched through the insulating layer over the length of the ridges 32 and the electrodes deposited by flash evaporation. The structure is finally cleaved into individual laser chips. The electrode 50 is graded from a goldgermanium alloy through nickel to gold, while electrode 52 is graded from a gold-zinc alloy through nickel to gold. |
公开日期 | 1975-09-04 |
申请日期 | 1971-09-03 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/73811] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | STANDARD TELEPHONES AND CABLES PTY. LIMITED |
推荐引用方式 GB/T 7714 | GEORGE HORACE BROOKE THOMPSON PETER RICHARD SELWAY AND ANTHONY RICHARD GOODWIN. Improvements in or relating to injection lasers. AU1971033076A1. 1975-09-04. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论