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	Semiconductor laser
	AOYAGI, TOSHITAKA; SHIRAI, SATOSHI
	2007-10-02
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	US7277465
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser
英文摘要	In a refractive index coupling distributed semiconductor laser having a Λ/2-phase-shift distributed feedback structure with a diffraction grating having a refractive index coupling property on an active layer, when viewed in a light distributed feedback direction, a value of (duty of a high refractive index portion)/(duty of a low refractive index portion) of a diffraction grating in a rear end face region is larger than that of a diffraction grating in a front end face region. In this manner, a coupling coefficient κ2 in a front end face region of a conventional semiconductor laser is smaller than a coupling coefficient κ1 in a rear end face region and is larger than 100 cm−
公开日期	2007-10-02
申请日期	2003-08-19
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/71650]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	AOYAGI, TOSHITAKA,SHIRAI, SATOSHI. Semiconductor laser. US7277465. 2007-10-02.

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