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	Method for fabricating semiconductor device
	UEDA, TETSUZO; ISHIDA, MASAHIRO; YURI, MASAAKI
	2005-05-03
著作权人	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
专利号	US6887770
国家	美国
文献子类	授权发明
其他题名	Method for fabricating semiconductor device
英文摘要	A polymer film including an adhesive layer, which can be peeled off with heat, is bonded to the upper surface of a semiconductor layer. Then, a KrF excimer laser light beam is applied to a surface of a substrate opposite to the semiconductor layer. This causes local heating at the laser spot, so that the bonding of atoms is cut off at the interface between the semiconductor layer and the substrate, thereby forming a thermal decomposition layer between the substrate and the semiconductor layer. Subsequently, the substrate is heated at a given temperature, so that the adhesive layer foams to lose its adhesive power. As a result, the polymer film is easily peeled off from the semiconductor layer.
公开日期	2005-05-03
申请日期	2003-05-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/71644]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
推荐引用方式 GB/T 7714	UEDA, TETSUZO,ISHIDA, MASAHIRO,YURI, MASAAKI. Method for fabricating semiconductor device. US6887770. 2005-05-03.

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