| Semiconductor laser | |
| SHIGENO KAZUO | |
| 1992-11-25 | |
| 著作权人 | NEC CORP |
| 专利号 | JP1992337688A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce a parasitic inductance of a wiring and to simultaneously obtain cooling capacity in a semiconductor laser having a Peltier element for high speed response operation. CONSTITUTION:An insulating board 5 is placed on a metal base 4 mounted on a Peltier element, and a semiconductor laser 1 is coupled to a signal input line 10 by a bonding wire 7 via a strip line 6. Both characteristics in which an S21 parameter is 4GHz and a cooling capacity is 45 deg.C, are simultaneously performed. |
| 公开日期 | 1992-11-25 |
| 申请日期 | 1991-05-15 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/71058]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SHIGENO KAZUO. Semiconductor laser. JP1992337688A. 1992-11-25. |
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