Semiconductor laser | |
SHIGENO KAZUO | |
1992-11-25 | |
著作权人 | NEC CORP |
专利号 | JP1992337688A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser |
英文摘要 | PURPOSE:To reduce a parasitic inductance of a wiring and to simultaneously obtain cooling capacity in a semiconductor laser having a Peltier element for high speed response operation. CONSTITUTION:An insulating board 5 is placed on a metal base 4 mounted on a Peltier element, and a semiconductor laser 1 is coupled to a signal input line 10 by a bonding wire 7 via a strip line 6. Both characteristics in which an S21 parameter is 4GHz and a cooling capacity is 45 deg.C, are simultaneously performed. |
公开日期 | 1992-11-25 |
申请日期 | 1991-05-15 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/71058] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NEC CORP |
推荐引用方式 GB/T 7714 | SHIGENO KAZUO. Semiconductor laser. JP1992337688A. 1992-11-25. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论