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	Semiconductor laser device
	NAGAI SEIICHI
	1991-10-01
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1991222384A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To enable a laser diode to be optically coupled well with a monitoring PD by a method wherein a planar light emitting type laser diode is assembled on a photodiode where a laser diode is constituted. CONSTITUTION:A monitoring PD 4 is formed on a sub-mount 2, a planar light emitting type LD chip 9 is assembled on the monitoring PD 4, the sub-mount 2 is built in a stem 5, and the LD chip 9 and the PD 4 and wire-bonded to a lead wire 7 with a gold wire and electrically connected. A cap 8 is welded to the stem 5. The rear of the planar light emitting type LD 4 is formed smaller than 100% in reflectively, so that light can penetrate through the LD 4 from the rear side. The planar light emitting type LD 4 is assembled on the monitoring PD 4, the outgoing light from the rear of the planar light emitting type LD 4 is incident on the monitoring PD 4, and they are optically coupled together well. The bonding surfaces of an LD and a PD are in parallel with each other, so that a die bonding and a wire bonding process can be simplified.
公开日期	1991-10-01
申请日期	1990-01-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70972]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	NAGAI SEIICHI. Semiconductor laser device. JP1991222384A. 1991-10-01.

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