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	Semiconductor laser device
	OTA YOICHIRO
	1991-06-20
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1991145782A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain a semiconductor laser device of high reliability where heat induced in an active layer is efficiently dissipated outside by a method wherein a hole is bored in a GaAs substrate, and material higher than the substrate in thermal conductivity is filled into the hole concerned. CONSTITUTION:Electrons and holes injected through electrodes A2 and B6 are recombined together in an active layer 5a to emit light. Heat induced with the emission of light is dissipated outside traveling through a GaAs substrate 3, a buried part 4, and a block At this point, if the buried part 4 is formed of mateiral of high thermal conductivity, heat can be quickly dissipated, which is conductive to the improvement of a semiconductor laser device in reliability. Moreover, the batter the adhesion between the GaAs substrate 1 and the buried part 3 is, the more the semiconductor laser device is improved in heat dissipating property, so that the buried part 4 is formed in such a manner that melt is poured into a hole bored in the GaAs substrate 3 and assimilated to it. In, Na, or Li is adapted for the material of the buried part 4, taking their melting point and thermal conductivity into consideration.
公开日期	1991-06-20
申请日期	1989-10-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70955]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	OTA YOICHIRO. Semiconductor laser device. JP1991145782A. 1991-06-20.

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