QQ客服 官方微博 反馈留言

	Light emitting diode
	TOKUNAGA HIROYUKI
	1990-08-10
著作权人	CANON INC
专利号	JP1990201975A
国家	日本
文献子类	发明申请
其他题名	Light emitting diode
英文摘要	PURPOSE:To provide a light emitting device in which a light emitting element satisfactorily dissipates heat and cooling efficiency is high by constructing a substrate a nucleus formation surface of which is exposed, with a material having higher nucleus formation density than a deposition part, and growing a single crystal on the substrate. CONSTITUTION:A thin film-shaped deposition part 2 comprising a material with low crystal nucleus formation density is formed on a high melting point metal substrate Then, a base 3 comprising a high nucleus formation density material is formed on the deposition part 2 in a small area region enough to form a single nucleus. Accordingly, a non-nucleus formation surface spreads on the surfaced of the deposition part 2, in which the nucleus formation surface being a base 3 surface remains exposed on which a single crystal is grown. Therefore, the single crystal is grown on the metal substrate with good thermal conductivity in the condition where there is assured very excellent thermal constant, in which a light emitting element with a good heating property is produced. Hereby, performance of a light emitting element can be prevented from being deteriorated to provide a good cooling efficiency light emitting device.
公开日期	1990-08-10
申请日期	1989-01-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70898]
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	TOKUNAGA HIROYUKI. Light emitting diode. JP1990201975A. 1990-08-10.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。