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	Semiconductor laser device
	NAGAI SEIICHI; YOSHIDA KAZUTOMI; ISHII MITSUO; HASEGAWA KAZUYOSHI
	1990-04-13
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1990101786A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain a semiconductor laser device capable of realizing excellent coupling efficiency by a method wherein the irregularity of coupling efficiency with an optical fiber is reduced by providing a cap with a multi-stage projection and a lens. CONSTITUTION:A heat sink 2 is so assembled in a stem 6 that the light emitting point of an LD chip 1 coincides with the center axis of the stem 6. A cap 8 is provided with a lens 3 and a multi-stage projection 9. The cap 8 is fixed in the following manner; the cap is finely moved in X and Y directions while the LD is made to radiate light, a photo detection device arranged so as to face the lens 3 monitors optical axis alignment, and the cap is fixed when the optical axes coincide with each other in X and Y directions. Fusion welding is progressed while the tip part of the multi-stage projection 9 is melted, and repeated step-wise is performed until the optical axis alignment in Z-axis direction is finished. Fine movement of the cap in the course of optical axis alignment is enabled in this manner while the LD light is monitored, so that the coupling efficiency with optical fiber is improved, irregularity is reduced, and mass-productivity is increased.
公开日期	1990-04-13
申请日期	1988-10-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70878]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	NAGAI SEIICHI,YOSHIDA KAZUTOMI,ISHII MITSUO,et al. Semiconductor laser device. JP1990101786A. 1990-04-13.

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