Semiconductor laser device | |
NAGAI SEIICHI | |
1989-11-13 | |
著作权人 | MITSUBISHI ELECTRIC CORP |
专利号 | JP1989281787A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | PURPOSE:To facilitate satisfactory signal reproduction by a method wherein a mirror whose reflective surface is inclined with a required angle so as to make a laser beam applied to a signal reproducing PD and make a monitoring beam used for control of the laser beam applied to a monitoring PD without mutual interference is provided. CONSTITUTION:An N-type semiconductor substrate 16 is used as a submount. P-type diffused regions are formed at two positions on the same surface of the substrate 16 to provide a signal reproducing PD 14 and a monitoring PD 4. Also, an LD (semiconductor laser device) chip 1 is die-bonded to the substrate 16. Further, a mirror 17 whose reflective plane is inclined with a required angle so as to place the reflective surface above the signal reproducing PD 14 and the monitoring PD 4. With this constitution, a laser beam can be applied to the signal reproducing PD without giving influence upon the monitoring beam application to the monitoring PD, so that the signal can be reproduced satisfactorily. |
公开日期 | 1989-11-13 |
申请日期 | 1988-05-07 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/70839] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | NAGAI SEIICHI. Semiconductor laser device. JP1989281787A. 1989-11-13. |
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