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	Semiconductor laser device
	NAGAI SEIICHI
	1989-11-13
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1989281787A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To facilitate satisfactory signal reproduction by a method wherein a mirror whose reflective surface is inclined with a required angle so as to make a laser beam applied to a signal reproducing PD and make a monitoring beam used for control of the laser beam applied to a monitoring PD without mutual interference is provided. CONSTITUTION:An N-type semiconductor substrate 16 is used as a submount. P-type diffused regions are formed at two positions on the same surface of the substrate 16 to provide a signal reproducing PD 14 and a monitoring PD 4. Also, an LD (semiconductor laser device) chip 1 is die-bonded to the substrate 16. Further, a mirror 17 whose reflective plane is inclined with a required angle so as to place the reflective surface above the signal reproducing PD 14 and the monitoring PD 4. With this constitution, a laser beam can be applied to the signal reproducing PD without giving influence upon the monitoring beam application to the monitoring PD, so that the signal can be reproduced satisfactorily.
公开日期	1989-11-13
申请日期	1988-05-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70839]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	NAGAI SEIICHI. Semiconductor laser device. JP1989281787A. 1989-11-13.

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