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	Semiconductor laser device
	HASEGAWA MITSUTOSHI
	1989-07-26
著作权人	CANON INC
专利号	JP1989186689A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To reduce short circuits between electrodes and the breakdown of elements on the occasion of manufacturing the elements, by disposing a plurality of semiconductor laser elements in the form of plane, in which one of resonance planes out of a pair of resonance planes facing each other is formed as a part of inner walls of holes in each semiconductor laser element. CONSTITUTION:One of resonance planes 17 out of resonance planes 16 and 17 in respective laser elements 11-15 is formed as a part of inner walls of holes 18 which are provided at disposition planes of respective laser elements 11-15. Thus, the above elements 11-15 are placed freely in order and extraction electrodes 11d-15d of the elements 11-15 can be disposed in such a way that they are placed freely in order at places other than the disposition parts of the elements and further, evenly in non- contact state. For example, out of the electrodes 11d-15d which are extracted independently from current injection regions 11a-15a, the electrodes located at both ends 11d and 15d are extracted toward both sides and the electrodes 12d-14d are extracted to keep away the holes 18 which have the resonance planes 17 as parts of the inner walls of them and then, wire bonding 20 is performed at suitable positions. Thus, short circuits between the electrodes 11d-15d and the breakdown of the elements 11-15 decrease.
公开日期	1989-07-26
申请日期	1988-01-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70823]
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	HASEGAWA MITSUTOSHI. Semiconductor laser device. JP1989186689A. 1989-07-26.

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