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	Manufacture of semiconductor laser device
	HAYASHI HIROSHI; YAMAMOTO OSAMU; MIYAUCHI NOBUYUKI; YAMAMOTO SABURO
	1987-06-19
著作权人	SHARP CORP
专利号	JP1987136893A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser device
英文摘要	PURPOSE:To facilitate manufacture of an internal reflection interference type semiconductor laser device which has a stable vertical mode with an improved yield by a method wherein marks are provided on one main surface of a semiconductor laser wafer corresponding to the position in which an internal reflective region exists. CONSTITUTION:Ohmic electrodes 5 and 6 made of electrode metal are provided on both surfaces of an element which has an internal reflective region 3 and an Al electrode 7 for lead bonding is provided on the top surface. Roughly triangle-shape marks 8 and 9 are provided on the Al electrode 7 at the positions corresponding to the internal reflective region 3. In the process by which a semiconductor laser wafer is divided into bar-shape or chip-shape semiconductor laser elements, the marks 8 and 9 can be a reference for determining an external resonator length. Therefore, the external resonator length can be set with a high accuracy.
公开日期	1987-06-19
申请日期	1985-12-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70673]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	HAYASHI HIROSHI,YAMAMOTO OSAMU,MIYAUCHI NOBUYUKI,et al. Manufacture of semiconductor laser device. JP1987136893A. 1987-06-19.

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