Manufacture of semiconductor laser device | |
HAYASHI HIROSHI; YAMAMOTO OSAMU; MIYAUCHI NOBUYUKI; YAMAMOTO SABURO | |
1987-06-19 | |
著作权人 | SHARP CORP |
专利号 | JP1987136893A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Manufacture of semiconductor laser device |
英文摘要 | PURPOSE:To facilitate manufacture of an internal reflection interference type semiconductor laser device which has a stable vertical mode with an improved yield by a method wherein marks are provided on one main surface of a semiconductor laser wafer corresponding to the position in which an internal reflective region exists. CONSTITUTION:Ohmic electrodes 5 and 6 made of electrode metal are provided on both surfaces of an element which has an internal reflective region 3 and an Al electrode 7 for lead bonding is provided on the top surface. Roughly triangle-shape marks 8 and 9 are provided on the Al electrode 7 at the positions corresponding to the internal reflective region 3. In the process by which a semiconductor laser wafer is divided into bar-shape or chip-shape semiconductor laser elements, the marks 8 and 9 can be a reference for determining an external resonator length. Therefore, the external resonator length can be set with a high accuracy. |
公开日期 | 1987-06-19 |
申请日期 | 1985-12-10 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/70673] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP CORP |
推荐引用方式 GB/T 7714 | HAYASHI HIROSHI,YAMAMOTO OSAMU,MIYAUCHI NOBUYUKI,et al. Manufacture of semiconductor laser device. JP1987136893A. 1987-06-19. |
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