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	Semiconductor laser device
	KOBAYASHI MASAYOSHI; MORI TAKAO; CHIBA KATSUAKI; SATOU NOBU; HIRAO MOTONAO; NAKAMURA MICHIHARU
	1985-11-27
著作权人	HITACHI SEISAKUSHO KK
专利号	JP1985239086A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To prevent a short circuit due to molten solder to the side surface of a laser chip by forming a groove along the periphery or a trapezoid stepped section in size slightly smaller than a bonding region in the laser chip to the surface of a sub-mount. CONSTITUTION:A resin mask 3 having a rectangular narrow striped pattern smaller than the size of a laser chip is formed in the and directions to a thermal oxide film 2 on the (100) face of an Si substrate The oxide film 2 is etched by using HF:NH4F=1:6, V grooves 4 are shaped through anisotropic etching by KOH, the oxide film 2 and the mask 3 are removed, and a sub-mount is formed through cutting 5. The laser chip 7 is placed on the sub- mount 8 so that the grooves 4 are hidden under the chip 7, load is applied to the chip 7, and the sub-mount 8 is heated to melt In as a solder material and the chip is bonded with the sub-mount. According to said constitution, short circuits by the solder material and the partial shielding of an output from a laser due to the bumps by solder and not generated.
公开日期	1985-11-27
申请日期	1985-04-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70639]
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	KOBAYASHI MASAYOSHI,MORI TAKAO,CHIBA KATSUAKI,et al. Semiconductor laser device. JP1985239086A. 1985-11-27.

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