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	Manufacture of semiconductor laser device
	MATSUDA OSAMU; TOTSUKA KAZUO
	1986-09-12
著作权人	SONY CORP
专利号	JP1986206286A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser device
英文摘要	PURPOSE:To prevent the warpage of the distribution of luminous intensity, and to save power by half-cutting a semiconductor wafer, bonding a semiconductor laser chip so that the outgoing end surface of laser beams is protruded slightly to the upper section of a groove formed through a half-cut and full- cutting the wafer. CONSTITUTION:An N type semiconductor layer 2 and a P-type semiconductor region 3 are shaped onto the surface of an N type silicon semiconductor wafer 1 to form a PIN type monitor photodiode 4, and an N type semiconductor region 5 is shaped where slightly separate from the semiconductor region 3. A region to be diced in the surface of the semiconductor wafer 1 is half-cut through sawing, thus obtaining a groove 8. Semiconductor laser chips 9 are bonded onto each solder layer 7, and the positions of laser-beam outgoing end surfaces 11 are set so that the end surfaces 11 are protruded slightly onto the grooves 8 from the solder layers 7. The wafer is full-cut by a cutter 12 for dicing, and pelletized. Accordingly, the eclipse of laser beams is not generated, thus preventing the warpage of the distribution curve of luminous intensity in the vertical direction of laser beams, then saving the man-hour of the work.
公开日期	1986-09-12
申请日期	1985-03-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70627]
专题	半导体激光器专利数据库
作者单位	SONY CORP
推荐引用方式 GB/T 7714	MATSUDA OSAMU,TOTSUKA KAZUO. Manufacture of semiconductor laser device. JP1986206286A. 1986-09-12.

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