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	Manufacture of semiconductor laser device
	HAYASHI HIROSHI; YAMAMOTO SABUROU; YANO MORICHIKA
	1983-12-14
著作权人	SHARP KK
专利号	JP1983215088A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser device
英文摘要	PURPOSE:To obtain a laser device having no electrode exfoliation by a method wherein a conductive region is provided at a part of a conduction block region by a photoetching method, and an ohmic contact metal is adhered on the used resist mask and lifted off. CONSTITUTION:An oxide film 32 for conduction block is provided on one main surface of a laser wafer 31, the resist mask 37 is applied and etched, thus the conduction region 33 is provided, and then an Au alloy layer 35 is adhered over the entire surface as the ohmic contact metal without removing the mask 37. The layer 35 is thinned sufficiently and cut in step at stepwise difference parts. The resist mask 37 is exfoliated, thus the alloy layer 35 is lifted off, and accordingly the electrode is left only at the conduction region 33. Ohmic contact is formed at th conduction region 33 by heat-alloying, then the electrode layer 36 containing a high melting point metal is deposited over the entire surface, resulting in the improvement of the adhesion between the oxide film 32 which constitutes the conduction block region and that to the heat sink. This constitution enables to form an ohmic contact electrode at a narrow conduction region uniformly and securely.
公开日期	1983-12-14
申请日期	1982-06-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70484]
专题	半导体激光器专利数据库
作者单位	SHARP KK
推荐引用方式 GB/T 7714	HAYASHI HIROSHI,YAMAMOTO SABUROU,YANO MORICHIKA. Manufacture of semiconductor laser device. JP1983215088A. 1983-12-14.

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