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	Semiconductor laser device and its manufacture
	NAKAJIMA MASATO; MIKI SHINICHI
	1983-06-10
著作权人	NIPPON DENKI KK
专利号	JP1983097885A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device and its manufacture
英文摘要	PURPOSE:To obtain structure and manufacture, mass-producing capability thereof is excellent, by forming a trapezoid projection to the surface at the side, where a laser pellet is placed, of a silicon heat sink through anisotropic etching. CONSTITUTION:The projecting section 12 is shaped to the silicon heat sink 11, and the laser pellet 15 is mounted to the plane section of an upper surface. The end surface of the laser pellet and the end surface of the heat sink are conformed at the main beam side, and the eclipse of main beams is prevented. Sub- beams 17 collide with inclined planes 14, and are reflected to oblique upper sections. The form of the heat sink is mass-produced through a method mentioned blow. A single crystal silicon substrate is thermally oxidized, an oxide film is removed while leaving only the projecting section, and the surface is mesa-etched by using an anisotropic etching liquid. When the face orientation of the substrate is properly selected at that time, a desirable tilt angle can be obtained. Accordingly, a large number of the projecting sections 19 are shaped to the silicon substrate 18, and the substrate is cut along cutting lines.
公开日期	1983-06-10
申请日期	1981-12-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70459]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	NAKAJIMA MASATO,MIKI SHINICHI. Semiconductor laser device and its manufacture. JP1983097885A. 1983-06-10.

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