| Semiconductor device | |
| SATOU NAO; KOBAYASHI MASAYOSHI; NAKAMURA KOUSUKE | |
| 1982-12-24 | |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 专利号 | JP1982210648A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To improve the heat dissipation property of a semiconductor device by placing a semiconductor element on a heat dissipating element which is composed of a sintered material in which BeO is added to SiC, thereby reducing a strain. CONSTITUTION:A submount 3 which is composed of a sintered material in which 0.3-20wt% of BeO is added to SiC is placed on a heat sink 10, and a semiconductor element such as an AsP semiconductor laser 1 or the like of InP/InGa having an active layer 3 is mounted through an Sn-rich Au-Sn solder 4 on the submount 3. In this manner, since a strain due to the difference of thermal expansion coefficient is reduced and heat dissipating effect can be simultaneously sufficiently improved, the lifetime of the element can be increased. |
| 公开日期 | 1982-12-24 |
| 申请日期 | 1981-06-19 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/70446]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SATOU NAO,KOBAYASHI MASAYOSHI,NAKAMURA KOUSUKE. Semiconductor device. JP1982210648A. 1982-12-24. |
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