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	Semiconductor device
	SUGINO TAKASHI; ITOU KUNIO; WADA MASARU; SHIMIZU HIROICHI
	1982-09-22
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1982153488A
国家	日本
文献子类	发明申请
其他题名	Semiconductor device
英文摘要	PURPOSE:To obtain a photo guiding passage with fluctuated groove width by forming a crystal layer on the surface of a semiconductor substrate having the groove with fluctuated width. CONSTITUTION:A groove 9 with fluctuated width is formed on an n type Ga As crystal substrate 9. On this substrate, an n type Ga Al As 11 and non-doped Ga As 12, for instance, are continuously grown. In this contruction, the groove 11' of the layer 11 and flat 11'' differ in thickness and a light that propagates in the layer 12 travels through the thinner part 11'' of the layer 11 and leaks to the substrate 9, and is trapped in the layer 2 on a thicker part 11'. Therefore, if the thickness of 11', 11'' of the layer are made according to the frequency of the light, the light propagates in the part shown by a dotted line. If the dotted part is used for a photo guiding passage and since the width of an entrance and an exit can be varied, the light is guided through a wider side X', Y' and taken out through a narrow side, X, Y, improving coupling efficiency of optical fiber.
公开日期	1982-09-22
申请日期	1981-03-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70435]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	SUGINO TAKASHI,ITOU KUNIO,WADA MASARU,et al. Semiconductor device. JP1982153488A. 1982-09-22.

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