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	Semiconductor laser device
	YOSHIHARA KAZUHIRO
	1990-07-31
著作权人	日本電気株式会社
专利号	JP1990193331A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain the subject device without being influenced by a beat signal by providing a semiconductor laser with plural independently drivable light emitting points, plural DC current sources for supplying a DC current to each individual light emitting point and plural high frequency current sources, each for superimposing a high frequency current upon each of the DC current sources and providing a high frequency signal oscillating source to be used in common for the high frequency current sources. CONSTITUTION:The semiconductor laser device is constitutive of an array semiconductor laser 1 having laser elements 11 and 12 as two independently drivable light emitting points, two DC current sources 21 and 22 for supplying their DC currents to the elements 11 and 12, two high frequency current sources 41 and 42 for superimposing their high frequency currents upon these DC currents respectively and one high frequency oscillator 3 to be used in common for these high frequency current sources. Under such circumstances, since both elements 11 and 12 are high-frequency-modulated with an oscillating frequency specified by the oscillator 3, no interference is given by them. Consequently, a multibeam optical head device capable of accurately detecting information recorded on an information recording medium can be obtained.
公开日期	1990-07-31
申请日期	1989-01-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/69035]
专题	半导体激光器专利数据库
作者单位	日本電気株式会社
推荐引用方式 GB/T 7714	YOSHIHARA KAZUHIRO. Semiconductor laser device. JP1990193331A. 1990-07-31.

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