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	Enhanced raman amplification and lasing in silicon-based photonic crystals
	WONG, CHEE WEI; YANG, XIADONG
	2006-03-09
著作权人	TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK, THE
专利号	US20060050744A1
国家	美国
文献子类	发明申请
其他题名	Enhanced raman amplification and lasing in silicon-based photonic crystals
英文摘要	Tunable laser devices and methods of manufacturing such devices are disclosed. air-holes with defects that form an optical waveguide. The waveguide has a cross-sectional area whose dimensions are in sub-wavelength ranges, wherein the cross-sectional area is perpendicular to the propagation direction of light in the waveguide. The waveguide receives pump light and outputs Stokes light through Raman scattering. The laser device may include a photonic crystal made from silicon having air-holes with defects forming a pair of optically coupled cavities. The geometries of the cavities can be substantially identical to each other. The cavities are defined to cause a frequency-splitting difference between a frequency of pump light and a frequency of Stokes light to correspond to an optical phonon frequency in silicon through Raman scattering.
公开日期	2006-03-09
申请日期	2005-07-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67890]
专题	半导体激光器专利数据库
作者单位	TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK, THE
推荐引用方式 GB/T 7714	WONG, CHEE WEI,YANG, XIADONG. Enhanced raman amplification and lasing in silicon-based photonic crystals. US20060050744A1. 2006-03-09.

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