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	Manufacture of quantum fine wire laser device
	KARAKIDA SHOICHI
	1991-09-03
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1991201586A
国家	日本
文献子类	发明申请
其他题名	Manufacture of quantum fine wire laser device
英文摘要	PURPOSE:To eliminate an etching step for forming a well layer by performing an AlGaAs layer crystal growth while emitting an interference light of an excimer laser to form a fine wire well layer in the AlGaAs layer. CONSTITUTION:An excimer laser light is emitted by using a Michelson interferometer or the like to alternately form a dark part and a bright part corresponding to laser light emitting and nonemitting parts, a crystal growth is performed by an MOCVD method while regulating the growing temperature, an excimer laser light output intensity to have a desired Al composition ratio in the regions of the dark and bright parts, and an AlGaAs barrier layer 3 and a well layer 4 having smaller Al composition ratio than an AlGaAs barrier layer are alternately formed in parallel to the crystal growing surface on the same layer. Then, the excimer laser emitting is stopped, the layer 3, an AlGaAs clad layer 5, a GaAs contact layer 6 are sequentially formed by an MOCVD method.
公开日期	1991-09-03
申请日期	1989-12-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67758]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	KARAKIDA SHOICHI. Manufacture of quantum fine wire laser device. JP1991201586A. 1991-09-03.

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