High power single mode semiconductor laser device and fabrication method thereof | |
KIM, BUM JOON; CHO, SOO HAENG | |
2006-08-31 | |
著作权人 | SAMSUNG ELECTRO-MECHANICS CO., LTD. |
专利号 | US20060193353A1 |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | High power single mode semiconductor laser device and fabrication method thereof |
英文摘要 | The present invention relates to a high-power single-mode semiconductor laser device, in which a first conductivity-type cladding layer is formed on a semiconductor substrate. An active layer is formed on the first conductivity-type cladding layer, and a second conductivity-type cladding layer is formed on the active layer, with a ridge protruding upward. The invention has corrugated parts formed on upper surfaces of the second conductivity-type cladding layer on both sides next to the ridge for scattering light in order to suppress high order mode oscillation. |
公开日期 | 2006-08-31 |
申请日期 | 2005-12-14 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/67747] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SAMSUNG ELECTRO-MECHANICS CO., LTD. |
推荐引用方式 GB/T 7714 | KIM, BUM JOON,CHO, SOO HAENG. High power single mode semiconductor laser device and fabrication method thereof. US20060193353A1. 2006-08-31. |
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