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	High power single mode semiconductor laser device and fabrication method thereof
	KIM, BUM JOON; CHO, SOO HAENG
	2006-08-31
著作权人	SAMSUNG ELECTRO-MECHANICS CO., LTD.
专利号	US20060193353A1
国家	美国
文献子类	发明申请
其他题名	High power single mode semiconductor laser device and fabrication method thereof
英文摘要	The present invention relates to a high-power single-mode semiconductor laser device, in which a first conductivity-type cladding layer is formed on a semiconductor substrate. An active layer is formed on the first conductivity-type cladding layer, and a second conductivity-type cladding layer is formed on the active layer, with a ridge protruding upward. The invention has corrugated parts formed on upper surfaces of the second conductivity-type cladding layer on both sides next to the ridge for scattering light in order to suppress high order mode oscillation.
公开日期	2006-08-31
申请日期	2005-12-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67747]
专题	半导体激光器专利数据库
作者单位	SAMSUNG ELECTRO-MECHANICS CO., LTD.
推荐引用方式 GB/T 7714	KIM, BUM JOON,CHO, SOO HAENG. High power single mode semiconductor laser device and fabrication method thereof. US20060193353A1. 2006-08-31.

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