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	Superhigh speed semiconductor laser
	MATSUEDA HIDEAKI
	1991-02-25
著作权人	HITACHI LTD
专利号	JP1991042890A
国家	日本
文献子类	发明申请
其他题名	Superhigh speed semiconductor laser
英文摘要	PURPOSE:To release restrictions on operating speed resulting from time required for recombination of carriers and the like by taking a semiconductor laser equipped with active layers and multi quantum well layers which are laminated in the direction that is different from the laminating direction of the active layers into wave guides so that polarizing directions of an optical mode become different respectively. CONSTITUTION:When an electric field vector performs oscillations by a mode located in the face of each active layer in the active layers 3 of a semiconductor laser, this basic laser light holds an electric field or an electric field component which intersects at right angles to each quantum well in a multi quantum well 8. Consequently, light excites electrons in the multi quantum well 8 until these electrons reach a state where they correspond to an optical mode intersecting at right angles to the well. When an injected current increases and excitation in the multi quantum well proceeds, inverted distribution takes place between double levels 13 and 14 in bands corresponding to different polarizing directions. Then, inversion-distributed electrons contribute to laser oscillations of resonators by means of end faces 7-9 and 10-11 at a fixed ratio. When the injected current decreases and it becomes less than a threshold level, inverted distribution disappears rapidly. As a result, output of the semiconductor laser is modulated at superhigh speed by a relaxation action in the bands of excitation conductor electrons.
公开日期	1991-02-25
申请日期	1989-07-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67682]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	MATSUEDA HIDEAKI. Superhigh speed semiconductor laser. JP1991042890A. 1991-02-25.

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