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	Laser light emitting element
	-
	1980-08-25
著作权人	FUTABA CORP
专利号	JP1980110089A
国家	日本
文献子类	发明申请
其他题名	Laser light emitting element
英文摘要	PURPOSE:To obtain red-color laser light, by the method wherein a very small quantity of Li is added to single crystalline ZnO, thereby an impurity level of a narrow energy band is formed in ZnO and is actively utilized. CONSTITUTION:High-purity Zn and metal Li, 0.001-10wt% with respect to Zn, preferably, 0.1-0.5wt%, are enclosed in a crucible. This is heated and the material is vaporized. Single crystalline sapphire 4 is made a substrate and this is supported by holder 3. The current in filament 5 is set at about 300mA, the acceleration voltage at about 1kV, and the substrate temperature at about 300 deg.C. After introducing O2 gas, the ambient pressure of crucible 1 is set at about 8X10 torr. Then, epitaxial film 13 of Zn added with Li is formed. By this, an impurity level of an extremely narrow energy band is formed in Zn by means of Li. This level is made a basic condition. By utilizing the transition between this and the condition of stable level formed by the oxygen absence center in ZnO, red-color laser light is obtained, and the half-value width of the light emission peak at normal-temperature operation is narrow.
公开日期	1980-08-25
申请日期	1979-02-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67567]
专题	半导体激光器专利数据库
作者单位	FUTABA CORP
推荐引用方式 GB/T 7714	-. Laser light emitting element. JP1980110089A. 1980-08-25.

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