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	Self oscillation type semiconductor laser device
	NAGAI SEIICHI; TAKAMIYA SABURO
	1988-05-27
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1988124489A
国家	日本
文献子类	发明申请
其他题名	Self oscillation type semiconductor laser device
英文摘要	PURPOSE:To obtain a pulsation LD, in which oscillation and quenching are conducted alternately, by forming an active layer held by upper and lower clad layers onto a semiconductor substrate and interposing a current block region limiting a current path between the substrate and these clad layers and active layer. CONSTITUTION:A P-type AlyGa1-yAs active layer 5 held by a P-type Alx Ga1-xAs lower clad layer 4 and an N-type AlxGa1-xAs upper clad layer 6 is shaped onto a P-type GaAs substrate An N-type GaAs current block layer 12 with a striped groove 3 corresponding to an oscillation region 10 positioned at the central section of the active layer 5 is interposed between the substrate 1 and the lower clad layer 4. A plurality of openings partitioned by meshy current block regions 12a are formed previously into the groove 3, laser oscillation is started when injected carrier density reaches a threshold or more, and oscillation and quenching are repeated with the variation of carrier density. Accordingly, a current path is limited, thus acquiring the desired state of oscillation.
公开日期	1988-05-27
申请日期	1986-11-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67557]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	NAGAI SEIICHI,TAKAMIYA SABURO. Self oscillation type semiconductor laser device. JP1988124489A. 1988-05-27.

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