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	Formation of electrode
	SASAKI TATSUYA; INAI MOTOHIKO
	1987-12-08
著作权人	NEC CORP
专利号	JP1987282480A
国家	日本
文献子类	发明申请
其他题名	Formation of electrode
英文摘要	PURPOSE:To form a platinum stripe electrode to enable continuous oscillation at a high temperature, and to enhance the characteristic of an element by a method wherein after a part of a dierectric film is removed in a stripe type to expose the surface of a semiconductor, platinum is evaporated on the whole surface, alloying treatment is performed, and then a platinum layer on the dielectric film is removed. CONSTITUTION:A clad layer 6, an active layer 5, a clad layer 4 and a cap layer 3 are grown in order on a substrate 7, an SiO2 oxide film is laminated thereon, and photolithography is performed using a mask to form stripe type grooves. The wafer and ZnP2, ZnAs2, InP are put in a quartz ampoule to be sealed in a vacuum, Zn is diffused up to the middle of the p-type clad layer 4, and the SiO2 film is removed. An SiO2 film is adhered again, stripe type grooves of two pieces are formed performing positioning of a mask, and mesa etching is performed using a Br2-CH3OH solution. Then an SiO2 film 10 is adhered again, positioning of a mask is performed, and stripes are formed. Pt is evaporated thereon, and after alloying is performed, the platinum layer on the dielectric film is removed.
公开日期	1987-12-08
申请日期	1986-05-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67549]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	SASAKI TATSUYA,INAI MOTOHIKO. Formation of electrode. JP1987282480A. 1987-12-08.

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