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	Manufacture of buried hetero structure semiconductor light emitting element
	JINDOU MASAAKI
	1984-10-15
著作权人	NIPPON DENKI KK
专利号	JP1984181080A
国家	日本
文献子类	发明申请
其他题名	Manufacture of buried hetero structure semiconductor light emitting element
英文摘要	PURPOSE:To perform a current narrowing to a mesa laminate which conveniently includes an active layer by reduce the resistance a high resistance layer on a mesa laminate by impurity diffusion from a semiconductor layer formed in contact with a high resistance layer. CONSTITUTION:An n type AlGaAs layer 2, an AlGaAs active layer 3, a P type AlGaAs layer 4 and a P type GaAs layer 5 are formed by epitaxial growth on an N type GaAs substrate Then, selective etching is performed to form a mesa laminate. Then, a high resistance AlGaAs layer 6 and a P type GaAs layer 10 are formed by second epitaxial growth. In this case, the current narrowing to the mesa laminate can be performed. Further, since the step of etching to remove the high resistance layer is not included, the yield can be improved.
公开日期	1984-10-15
申请日期	1983-03-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67547]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	JINDOU MASAAKI. Manufacture of buried hetero structure semiconductor light emitting element. JP1984181080A. 1984-10-15.

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