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	Quantum well laser
	SUGIMOTO MITSUNORI
	1986-09-30
著作权人	NEC CORP
专利号	JP1986220492A
国家	日本
文献子类	发明申请
其他题名	Quantum well laser
英文摘要	PURPOSE:To obtain a quantum well laser having excellent characteristics, by including a periodic structure comprising at least two or more kinds of semiconductor layers in the inside of a quantum well, thereby improving the crystalline property of the quantum well. CONSTITUTION:A quantum well laser comprises an n-type clad layer 1, a first guide layer 2, a quantum well 5 comprising GaAs layers 3 and AlAs layers 4, a second guide layer 6 and a p-type clad layer 7. The quantum well layer 5 is formed by alternately laminating the GaAs layers 3 and the AlAs layers 4. Many hetero-interfaces are included in the structure of the quantum well layer. Therefore the flatness of the interface becomes extremely excellent owing to these hetero-interfaces. Thus the homogenity of the quantum well layer 5 is improved. By alternately laminating the GaAs layers 3 and the AlAs layers 4, the crystalline property is more improved than the mixed crystal of an AlGaAs, and light emitting efficiency is enhanced.
公开日期	1986-09-30
申请日期	1985-03-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67476]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	SUGIMOTO MITSUNORI. Quantum well laser. JP1986220492A. 1986-09-30.

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