QQ客服 官方微博 反馈留言

	Semiconductor lasers utilizing optimized n-side and p-side junctions
	FARMER, JASON NATHANIEL; DEVITO, MARK ANDREW; HUANG, ZHE; CRUMP, PAUL ANDREW; GRIMSHAW, MICHAEL PETER; THIAGARAJAN, PRABHURAM; DONG, WEIMIN; WANG, JUN
	2009-07-02
著作权人	NLIGHT PHOTONICS CORPORATION
专利号	US20090168826A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor lasers utilizing optimized n-side and p-side junctions
英文摘要	A semiconductor laser and a method of forming the same are provided. The n-side and p-side junctions are independently optimized to improve carrier flow. The material for the n-side cladding layer is selected to yield a small conduction to valance band gap offset ratio while the material for the p-side cladding layer is selected to yield a large conduction to valance band gap offset ratio.
公开日期	2009-07-02
申请日期	2008-03-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67466]
专题	半导体激光器专利数据库
作者单位	NLIGHT PHOTONICS CORPORATION
推荐引用方式 GB/T 7714	FARMER, JASON NATHANIEL,DEVITO, MARK ANDREW,HUANG, ZHE,et al. Semiconductor lasers utilizing optimized n-side and p-side junctions. US20090168826A1. 2009-07-02.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。