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	Visible radiation semiconductor laser
	FUJII HIROAKI
	1992-02-27
著作权人	NEC CORP
专利号	JP1992062883A
国家	日本
文献子类	发明申请
其他题名	Visible radiation semiconductor laser
英文摘要	PURPOSE:To reduce an element formation of an AlGaInP visible radiation semiconductor laser and to improve heat dissipation characteristics during high output operation by making a conductivity type of a substrate of a semiconductor laser P-type, where a side of a mesa and a part excepting the mesa are coated with a semiconductor layer of the same conductivity as the substrate. CONSTITUTION:A semiconductor laser is formed through three times of metal organic thermal decomposition vapor growth method and mesa processing process. That is, a P-type GaInP layer 150, a P-type AlGaInP clad layer 120, an undoped GaInP active layer 110, an N-type AlGaInP clad layer 130, an N-type GaInP ethcing stopper layer 160, an N-type A GaInP clad layer 140, an N-type GaInP layer 170, and an N-type GaAs cap layer 190 are formed by crystal growth in this order to form a double hetero structure wafer. Then, the N-type AlGaInP 140 is processed to a mesa shape to form a laser structure. In the second crystal growth, a current block layer 180 which consists of P-type GaAs is formed by crystal growth in a side of the mesa and a part excepting the mesa. An N-type GaAs cap layer 200 is formed all over in the third crystal growth and electrodes are performed on both surfaces of an element.
公开日期	1992-02-27
申请日期	1990-06-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67436]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	FUJII HIROAKI. Visible radiation semiconductor laser. JP1992062883A. 1992-02-27.

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