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	Laser diode with metal-oxide upper cladding layer
	KNEISSL, MICHAEL A.; ROMANO, LINDA T.; VAN DE WALLE, CHRISTIAN G.
	2004-09-23
著作权人	XEROX CORPORATION
专利号	US20040184497A1
国家	美国
文献子类	发明申请
其他题名	Laser diode with metal-oxide upper cladding layer
英文摘要	A nitride-based laser diode structure utilizing a metal-oxide (e.g., Indium-Tin-Oxide (ITO) or Zinc-Oxide (ZnO)) in place of p-doped AlGaN to form the upper cladding layer. An InGaN laser diode structure utilizes ITO upper cladding structure, with an SiO2 isolation structure formed on opposite sides of the ITO upper cladding structure to provide a lateral index step that is large enough to enable lateral single-mode operation. The lateral index step is further increased by slightly etching the GaN:Mg waveguide layer below the SiO2 isolation structure. An optional p-type current barrier layer (e.g., AlGaN:Mg having a thickness of approximately 20 nm) is formed between the InGaN-MQW region and a p-GaN upper waveguide layer to impede electron leakage from the InGaN-MQW region.
公开日期	2004-09-23
申请日期	2003-03-20
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67409]
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION
推荐引用方式 GB/T 7714	KNEISSL, MICHAEL A.,ROMANO, LINDA T.,VAN DE WALLE, CHRISTIAN G.. Laser diode with metal-oxide upper cladding layer. US20040184497A1. 2004-09-23.

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