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	Semiconductor light emitting device and usage thereof
	KURUMADA KATSUHIKO; SEKI SHUNJI; TSUZUKI NOBUYORI; TAMAMURA TOSHIAKI; NAKANO JUNICHI
	1990-10-17
著作权人	NIPPON TELEGR & TELEPH CORP
专利号	JP1990256287A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting device and usage thereof
英文摘要	PURPOSE:To reduce a leakage current flowing through a buried region to obtain high output by effectively making junction to be formed of a current block layer and a current confinement layer into a reverse bias state. CONSTITUTION:A p-type lower part clad layer 2, an active layer 3, an n-type upper part clad layer 4, an n-type cap layer 5, an n-type current block layer 6 and a p-type current confinement layer 7 are provided on a p-type substrate Then, luminous operation is performed by a bias to be impressed between the first and second electrodes 15a and 16, while a third electrode 15a connecting to a p-type region 7 forming the n1-p2 in the n1p2n3p lamination of a course reaching a lower part layer 2 from a cap region 5 through the buried regions 7 and 6 through the ohmic property or the Schottky barrier property and a fourth electrode 15b connecting to an n-type region 6 forming the n3p junction through the ohmic property or the Schottky barrier property are arranged. Thereby, a leakage current is reduced while improving output.
公开日期	1990-10-17
申请日期	1989-07-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67400]
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGR & TELEPH CORP
推荐引用方式 GB/T 7714	KURUMADA KATSUHIKO,SEKI SHUNJI,TSUZUKI NOBUYORI,et al. Semiconductor light emitting device and usage thereof. JP1990256287A. 1990-10-17.

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