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	Semiconductor laser with external cavity
	CHIKAMA TERUMI; KIYONAGA TETSUYA; ONODA YOSHITO
	1989-01-26
著作权人	FUJITSU LTD
专利号	JP1989024485A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser with external cavity
英文摘要	PURPOSE:To enable control of a mode hopping caused by the change of a bias current of a semiconductor laser by a method wherein a medium variable in a refractive index is interposed between the semiconductor laser and a reflective mirror, to change the refractive index and the light fed back is controlled to keep the phase constant. CONSTITUTION:A semiconductor laser 11, a medium 13 variable in a refractive index, and a reflective mirror 12 are disposed in this sequence in a direction of optical axis. The refractive index variable medium 13 is, for instance, composed of a planar electrode installed on a three-dimensional waveguide path. A modulation control circuit 14 controls a bias current of the semiconductor laser 11 dependently on the electric signal inputted from a terminal 16. Thereby, the frequency of an oscillating laser ray is modulated corresponding to the inputted electric signal. A phase compensation circuit 15 detects the change of the bias current of the semiconductor laser 11 in the modulation control circuit 14 so as to regulate the voltage impressed on the refractive index variable medium 13 correspondently to the detected value, so that the fed back from the reflective mirror 12 is kept constant in phase.
公开日期	1989-01-26
申请日期	1987-07-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67290]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	CHIKAMA TERUMI,KIYONAGA TETSUYA,ONODA YOSHITO. Semiconductor laser with external cavity. JP1989024485A. 1989-01-26.

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