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	Semiconductor laser element of double hetero-junction type
	NITORI KOICHI
	1991-10-04
著作权人	VICTOR CO OF JAPAN LTD
专利号	JP1991225984A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element of double hetero-junction type
英文摘要	PURPOSE:To reduce the influence of a discrepancy between the lattice constant of an active layer and the lattice constant of clad layers at their operation by a method wherein the lattice constant of the active layer, the lattice constant of a p-type clad layer and the lattice constant of an n-type clad layer are constituted under specific conditions at the time when an electric current is applied and at the time when it is not applied. CONSTITUTION:When the lattice constant of an active layer is designated as A, the lattice constant of a p-type clad layer is designated as Ap and the lattice constant of an n-type clad layer is designated as An, the relationship of either ApA>An is kept at the time when an electric current is applied and at the time when it is not applied; their respective lattice constants at the time when the electric current is not applied are set in ranges of ¦Ap-A¦/A and ¦An-A¦/A. For example, an n-buffer layer 2 of n-GaAs is grown on an n-type substrate 1 composed of Si-doped GaAs at a substrate temperature of 750 deg.C in order to prevent that a defect such as a dislocation or the like on the surface of the substrate 1 is propagated to clad layers. An n-clad layer 3 of n-InGaAlP, an active layer 4 of InP an a p-type clad layer 5 of p-InGaAlP are grown sequentially on it. In addition, a p-cap layer 6 of p-GaAs is grown on it.
公开日期	1991-10-04
申请日期	1990-01-31
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67247]
专题	半导体激光器专利数据库
作者单位	VICTOR CO OF JAPAN LTD
推荐引用方式 GB/T 7714	NITORI KOICHI. Semiconductor laser element of double hetero-junction type. JP1991225984A. 1991-10-04.

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