Semiconductor laser element of double hetero-junction type | |
NITORI KOICHI | |
1991-10-04 | |
著作权人 | VICTOR CO OF JAPAN LTD |
专利号 | JP1991225984A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser element of double hetero-junction type |
英文摘要 | PURPOSE:To reduce the influence of a discrepancy between the lattice constant of an active layer and the lattice constant of clad layers at their operation by a method wherein the lattice constant of the active layer, the lattice constant of a p-type clad layer and the lattice constant of an n-type clad layer are constituted under specific conditions at the time when an electric current is applied and at the time when it is not applied. CONSTITUTION:When the lattice constant of an active layer is designated as A, the lattice constant of a p-type clad layer is designated as Ap and the lattice constant of an n-type clad layer is designated as An, the relationship of either ApA>An is kept at the time when an electric current is applied and at the time when it is not applied; their respective lattice constants at the time when the electric current is not applied are set in ranges of ¦Ap-A¦/A and ¦An-A¦/A. For example, an n-buffer layer 2 of n-GaAs is grown on an n-type substrate 1 composed of Si-doped GaAs at a substrate temperature of 750 deg.C in order to prevent that a defect such as a dislocation or the like on the surface of the substrate 1 is propagated to clad layers. An n-clad layer 3 of n-InGaAlP, an active layer 4 of InP an a p-type clad layer 5 of p-InGaAlP are grown sequentially on it. In addition, a p-cap layer 6 of p-GaAs is grown on it. |
公开日期 | 1991-10-04 |
申请日期 | 1990-01-31 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/67247] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | VICTOR CO OF JAPAN LTD |
推荐引用方式 GB/T 7714 | NITORI KOICHI. Semiconductor laser element of double hetero-junction type. JP1991225984A. 1991-10-04. |
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