| Liquid growthing method | |
| KUSUKI TOSHIHIRO | |
| 1986-03-06 | |
| 著作权人 | FUJITSU LTD |
| 专利号 | JP1986046018A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid growthing method |
| 英文摘要 | PURPOSE:To prevent pin-hole defects from occuring in a growth layer, by protecting the liquid growth surface of a substrate with the plane orientatin (100) face of indium phosphite, till the substrate is contacted to solution for liquid growthing. CONSTITUTION:Till a solution containing block 3 is moved to contact the solution 4 with a substrate 1, the block 3 is positioned so that a protecting plate 10 covers the substrate The protecting plate 10 is InP crystal plate with a surface of plane orientation (100). When liquid growth is done on the substrate 1 which has a surface layer of indium gallium phosphide formed by epitaxial growing on a gallium arsenide substrate having a surface of plane orientation (100), it can be prevented that pin-hole defects may be occurred in the growth layer. |
| 公开日期 | 1986-03-06 |
| 申请日期 | 1984-08-11 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/67217]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KUSUKI TOSHIHIRO. Liquid growthing method. JP1986046018A. 1986-03-06. |
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