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	Phase shifted surface emitting DFB laser structures with gain or absorptive gratings
	SHAMS-ZADEH-AMIRI, ALI M.; LI, WEI
	2003-08-07
著作权人	PHOTONAMI INC.
专利号	US20030147439A1
国家	美国
文献子类	发明申请
其他题名	Phase shifted surface emitting DFB laser structures with gain or absorptive gratings
英文摘要	A surface emitting semiconductor laser is shown having a semiconductor lasing structure having an active layer, opposed cladding layers contiguous to said active layer, a substrate, and electrodes by which current can be injected into the semiconductor lasing structure. Also included is a distributed diffraction grating having periodically alternating elements, each of the elements being characterized as being either a high gain element or a low gain element. Each of the elements has a length, the length of the high gain element and the length of the low gain element together defining a grating period, where the grating period is in the range required to produce an optical signal in the optical telecommunications signal band. A phase shifting structure is provided in the center of the grating to cause a peak intensity to occur over the center of the cavity by altering a mode profile of the output signal, while spatial hole burning arising from said altered mode profile is ameliorated.
公开日期	2003-08-07
申请日期	2002-12-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67209]
专题	半导体激光器专利数据库
作者单位	PHOTONAMI INC.
推荐引用方式 GB/T 7714	SHAMS-ZADEH-AMIRI, ALI M.,LI, WEI. Phase shifted surface emitting DFB laser structures with gain or absorptive gratings. US20030147439A1. 2003-08-07.

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