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	Vertical cavity surface emitting laser and a method of fabrication thereof
	KAPON, ELYAHOU; IAKOVLEV, VLADIMIR; SIRBU, ALEXEI; RUDRA, ALOK
	2003-08-28
著作权人	EPFL
专利号	US20030162315A1
国家	美国
文献子类	发明申请
其他题名	Vertical cavity surface emitting laser and a method of fabrication thereof
英文摘要	An electrically pumped VCSEL and a method of its fabrication are presented. The VCSEL comprises an active cavity material sandwiched between top and bottom DBR stacks, the top DBR having at least one n-semiconductor layer. The device defines an aperture region between the structured surface of the active cavity material and the n-semiconductor layer of the top DBR stack. The structured surface is formed by a top surface of a mesa that includes at least the upper n++layer of a p++/n++tunnel junction and the surface of a p-type layer outside the mesa. The structured surface is fused to the surface of the n-semiconductor layer of the DBR stack due to the deformation of these surfaces, thereby creating an air gap in the vicinity of the mesa between the fused surfaces. The active region is defined by the current aperture which includes the mesa surrounded by the air gap, thereby allowing for restricting an electrical current flow to the active region, while the air gap provides for the lateral variation of the index of refraction in the VCSEL.
公开日期	2003-08-28
申请日期	2003-03-06
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66326]
专题	半导体激光器专利数据库
作者单位	EPFL
推荐引用方式 GB/T 7714	KAPON, ELYAHOU,IAKOVLEV, VLADIMIR,SIRBU, ALEXEI,et al. Vertical cavity surface emitting laser and a method of fabrication thereof. US20030162315A1. 2003-08-28.

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