Vertical oscillation type semiconductor laser | |
OGURA MUTSUROU; YAO TAKAFUMI | |
1983-08-12 | |
著作权人 | KOGYO GIJUTSUIN (JAPAN) |
专利号 | JP1983135690A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Vertical oscillation type semiconductor laser |
英文摘要 | PURPOSE:To form a wavelength selecting vertical type light resonator and thus obtain a vertical oscillation type semiconductor laser available to an integration and a high output with stable oscillation wavelength, by growing two kinds of thin film with different dielectric constants alternately above and under an active layer. CONSTITUTION:A GaAlAs-GaAs multilayer film for which a molecular beam epitaxy (MBE) technique is used is decided as the material, and the active layer 3 is sandwiched between interference type reflection layers 2 and 4, and forms a light cavity vertically to an N type GaAs substrate 5. By keeping the upper electrode 1 at the potential of approx. 2V in opposition to the lower electrode 2, electrons and hole current are supplied into the active layer 3 and then re- coupled resulting in a light emission. Among emission spectrums, only those of wavelength 0.8mum are confined in the upper and lower reflection layers 2 and 4 into the state of laser oscillation. A part of the laser light is vertically irradiated from a window provided at the center of the upper electrode |
公开日期 | 1983-08-12 |
申请日期 | 1981-11-07 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/66267] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | KOGYO GIJUTSUIN (JAPAN) |
推荐引用方式 GB/T 7714 | OGURA MUTSUROU,YAO TAKAFUMI. Vertical oscillation type semiconductor laser. JP1983135690A. 1983-08-12. |
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