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	Vertical oscillation type semiconductor laser
	OGURA MUTSUROU; YAO TAKAFUMI
	1983-08-12
著作权人	KOGYO GIJUTSUIN (JAPAN)
专利号	JP1983135690A
国家	日本
文献子类	发明申请
其他题名	Vertical oscillation type semiconductor laser
英文摘要	PURPOSE:To form a wavelength selecting vertical type light resonator and thus obtain a vertical oscillation type semiconductor laser available to an integration and a high output with stable oscillation wavelength, by growing two kinds of thin film with different dielectric constants alternately above and under an active layer. CONSTITUTION:A GaAlAs-GaAs multilayer film for which a molecular beam epitaxy (MBE) technique is used is decided as the material, and the active layer 3 is sandwiched between interference type reflection layers 2 and 4, and forms a light cavity vertically to an N type GaAs substrate 5. By keeping the upper electrode 1 at the potential of approx. 2V in opposition to the lower electrode 2, electrons and hole current are supplied into the active layer 3 and then re- coupled resulting in a light emission. Among emission spectrums, only those of wavelength 0.8mum are confined in the upper and lower reflection layers 2 and 4 into the state of laser oscillation. A part of the laser light is vertically irradiated from a window provided at the center of the upper electrode
公开日期	1983-08-12
申请日期	1981-11-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66267]
专题	半导体激光器专利数据库
作者单位	KOGYO GIJUTSUIN (JAPAN)
推荐引用方式 GB/T 7714	OGURA MUTSUROU,YAO TAKAFUMI. Vertical oscillation type semiconductor laser. JP1983135690A. 1983-08-12.

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