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	Compound semiconductor layer
	SHINOHARA MASANORI; YANAGAWA FUMIHIKO
	1988-11-22
著作权人	日本電信電話株式会社
专利号	JP1988284808A
国家	日本
文献子类	发明申请
其他题名	Compound semiconductor layer
英文摘要	PURPOSE:To suppress propagation of a dislocation in a substrate without creating a misfit dislocation by a method wherein one of the lower end of a conduction band energy and the upper end of a valence band energy is discontinuous and doping with an impurity which gives the P-type conductivity to the upper end of the valence band energy or an impurity which gives the N-type conductivity to the lower end of the conduction band energy is carried out. CONSTITUTION:The compound semiconductor layer of the present invention has a super-lattice spacer layer 4a with a laminate structure composed of thin layers of 1st crystals and thin layers of 2nd crystals laminated alternately. In the relative relations between the 1st crystal and the 2nd crystal, one of the lower end of a conduction band energy and the upper end of a valence band energy is discontinuous. The thin layer composed of the crystal with the relatively higher lower end of the conduction band energy is doped with an impurity giving the N-type conductivity or the thin layer composed of the crystal with the relatively lower upper end of the valence band energy is doped with an impurity giving the P-type conductivity. With this constitution, an epitaxial growth layer in which a dislocation does not exist can be obtained on the upper layer of the super-lattice spacer layer.
公开日期	1988-11-22
申请日期	1987-05-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66261]
专题	半导体激光器专利数据库
作者单位	日本電信電話株式会社
推荐引用方式 GB/T 7714	SHINOHARA MASANORI,YANAGAWA FUMIHIKO. Compound semiconductor layer. JP1988284808A. 1988-11-22.

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