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	Planar type light-emitting element
	IGUCHI SHINICHI
	1984-11-16
著作权人	SUMITOMO DENKI KOGYO KK
专利号	JP1984202676A
国家	日本
文献子类	发明申请
其他题名	Planar type light-emitting element
英文摘要	PURPOSE:To fit the titled light-emitting element to a monolithic integrated OEIC while reducing a stepped section by drawing out a lower electrode in the element by a conductive region, which is formed partially into a semi-insulating semiconductor base body and a buried layer and one part thereof is exposed to the surface of the element. CONSTITUTION:A P type conductive region 22 is formed partially by selectively diffusing Zn to the surface of a semi-insulating GaAs substrate 23. A growth layer of GaAlAs/GaAs double hetero-structure is formed on the substrate 23. A section 21 as a laser is left in a stripped shape, the residual growth layer is removed through etching, and a GaAlAs layer 25 having high resistance is grown through a molecular beam epitaxial growth method to completely bury the laser 2 The thickness of the GaAlAs layer 25 is equal to that of the laser 21 at that time, and the surface of an element is flattened. An N type conductive layer 29, a source 31 and a drain 32 in an FET and a channel 33 in the FET are each formed through ion implantation, and metallic wirings 28, 27, 30 and a gate electrode 26 in the FET are shaped accordingly.
公开日期	1984-11-16
申请日期	1983-04-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66249]
专题	半导体激光器专利数据库
作者单位	SUMITOMO DENKI KOGYO KK
推荐引用方式 GB/T 7714	IGUCHI SHINICHI. Planar type light-emitting element. JP1984202676A. 1984-11-16.

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